![]() Both product families meet the highest quality and performance demands. StrongIRFET™ and StrongIRFET™ 2 N-channel power MOSFETs add robust design and excellent price/performance to the best-in-class technology of OptiMOS™ MOSFETs. ![]() Now complemented by StrongIRFET™ and StrongIRFET™ 2 N-channel MOSFETs, this extended portfolio creates a truly compelling combination. Designed for high-performance applications and optimized for high switching frequencies, OptiMOS™ products offer the industry's best figure of merit. Infineon's OptiMOS™ N-channel power MOSFETs were developed to increase efficiency, power density, and cost-effectiveness. For this reason, using MOSFET transistor N-channels for high current applications is often the preferred choice. Because of the specific characteristics of N-channel MOSFETs, the mobility of the carriers is approximately two to three times higher than that of a P-channel for the same R DS(on) value, and the P-channel chip must be two to three times the size of the N-channel. This allows electrons to move quickly and easily through the current when the MOSFET is activated and switched on. ![]() An N-channel MOSFET uses electrons to create a current channel.
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